Production and properties of In/HgGa2S4 Schottky barriers

We have obtained In/HgGa2S4 rectifying photosensitive Schottky barriers. Th e sensitivity of the best structures reaches 200 V/W, and it is observed in the spectral range 0.8-3.8 eV at T=300 K with barrier contact side illumin ation. It is determined that the photosensitivity spectra of the Schottky b arriers correspond to the photoluminescence of the crystals used to produce the barriers, and this correspondence is analyzed. It is concluded that th e Schottky barriers can be used for monitoring the optical quality of HgGa2 S4 single crystals as wide-band photodetectors. (C) 1999 American Institute of Physics. [S1063-7826(99)01410-6].