Formation of optically active centers in films of erbium-doped amorphous hydrated silicon

Authors
Mezdrogina, MM Annaorazova, MP Terukov, EI Trapeznikova, IN Nazarov, N
Citation
Mm. Mezdrogina et al., Formation of optically active centers in films of erbium-doped amorphous hydrated silicon, SEMICONDUCT, 33(10), 1999, pp. 1145-1148
Citations number
15
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SEMICONDUCTORS
ISSN journal
10637826 → ACNP
Volume
33
Issue
10
Year of publication
1999
Pages
1145 - 1148
Database
ISI
SICI code
1063-7826(199910)33:10<1145:FOOACI>2.0.ZU;2-X
Abstract
We have observed photoluminescence at 1.54 mu m from a-Si:H films doped wit h erbium of various degrees of purity. It is shown that the additional intr oduction of oxygen activates the Er ions. The effect of silicides and defec ts in amorphous silicon a-Si:H films and in crystalline silicon c-Si is inv estigated. (C) 1999 American Institute of Physics. [S1063-7826(99)02310-8].