Initial results of CdS/CuInTe2 heterojunction formed by flash evaporation

Authors
El Assali, K Boustani, M Bekkay, T Khiara, A Outzourhit, A Ameziane, EL
Citation
K. El Assali et al., Initial results of CdS/CuInTe2 heterojunction formed by flash evaporation, SOL EN MAT, 59(4), 1999, pp. 349-353
Citations number
6
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
SOLAR ENERGY MATERIALS AND SOLAR CELLS
ISSN journal
09270248 → ACNP
Volume
59
Issue
4
Year of publication
1999
Pages
349 - 353
Database
ISI
SICI code
0927-0248(199911)59:4<349:IROCHF>2.0.ZU;2-M
Abstract
The CuInTe2 thin films is one of the most attractive semiconductors for sol ar cells applications, since its direct band gap energy (Eg approximate to 1 eV) is suitable as an absorber in photovoltaic conversion. In this letter the CuInTe2 thin films are prepared by flash evaporation technique. X-ray diffraction measurements on the as-deposited CuInTe2 film showed that these films consist mainly of the chalcopyrite phase. The junction formation in the n-CdS/p-CuInTe2 cell has been investigated using current-voltage (I-V) and capacitance-voltage (C-V) measurements. (C) 1999 Elsevier Science B.V. All rights reserved.