Grating-coupler excited interface phonons in GaAs/AlAs superlattices

Citation
Ag. Milekhin et al., Grating-coupler excited interface phonons in GaAs/AlAs superlattices, SOL ST COMM, 112(7), 1999, pp. 387-390
Citations number
17
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SOLID STATE COMMUNICATIONS
ISSN journal
00381098 → ACNP
Volume
112
Issue
7
Year of publication
1999
Pages
387 - 390
Database
ISI
SICI code
0038-1098(1999)112:7<387:GEIPIG>2.0.ZU;2-0
Abstract
The optical phonon modes of short-period GaAs/AlAs superlattices were inves tigated by means of far-infrared reflection spectroscopy using the grating coupler technique. Grating couplers provide a wavevector transfer parallel to the layers, enabling us to study the in-plane dispersion of the phonon m odes in the superlattice structure, The fundamental longitudinal and transv erse confined phonons of GaAs and AlAs were detected. For an increasing in- plane wavevector transfer the superlattice phonon modes show dispersion due to interface effects. (C) 1999 Elsevier Science Ltd. All rights reserved.