Physical model for the evolution of the defect system of silicon carbide with allowance for the internal elastic stress fields during implantation ofAl+ and N+ and subsequent annealing

A theoretical analysis is offered for the formation and development of defe cts in silicon carbide implanted with nitrogen and aluminum ions and then a nnealed. The diffusion of defects, the formation of complexes, and the infl uence of the internal elastic stress fields produced by the implanted ions and the created complexes on the migration of interstials are taken into ac count. The computed distributions of defects agree satisfactorily with the experimental data. Certain kinetic parameters of silicon carbide are estima ted numerically. (C) 1999 American Institute of Physics.