Lasing characteristics of lasers with a vertical cavity based on In0.2Ga0.8As quantum wells

Authors
Gaisler, VA Toropov, AI Bakarov, AK Kalagin, AK Moshegov, NT Tenne, DA Kachanova, MM Kopp, OR Nenasheva, LA Medvedev, AS
Citation
Va. Gaisler et al., Lasing characteristics of lasers with a vertical cavity based on In0.2Ga0.8As quantum wells, TECH PHYS L, 25(10), 1999, pp. 775-777
Citations number
7
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
TECHNICAL PHYSICS LETTERS
ISSN journal
10637850 → ACNP
Volume
25
Issue
10
Year of publication
1999
Pages
775 - 777
Database
ISI
SICI code
1063-7850(199910)25:10<775:LCOLWA>2.0.ZU;2-S
Abstract
Semiconductor lasers with a vertical cavity with a high external quantum ef ficiency and high radiation power have been developed and constructed. Powe rs up to 10 W at T=300 K and 20 W at T=250 K have been obtained for 500 mu m aperture lasers operating in the pulsed regime. (C) 1999 American Institu te of Physics.