Nature of the transitional region during the deposition of titanium borideand nitride films on gallium arsenide

Authors
Ermolovich, IB Konakova, RV Milenin, VV Senkevich, AI
Citation
Ib. Ermolovich et al., Nature of the transitional region during the deposition of titanium borideand nitride films on gallium arsenide, TECH PHYS L, 25(10), 1999, pp. 789-791
Citations number
7
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
TECHNICAL PHYSICS LETTERS
ISSN journal
10637850 → ACNP
Volume
25
Issue
10
Year of publication
1999
Pages
789 - 791
Database
ISI
SICI code
1063-7850(199910)25:10<789:NOTTRD>2.0.ZU;2-O
Abstract
Photoluminescence and x-ray photoelectron spectroscopy methods were used to analyze the compositions of the near-junction regions of titanium boride ( nitride)-gallium arsenide heterostructures. Data have been obtained for the first time on the formation of GaxB1-xAs and GaAsxN1-x solid solutions, wh ich play an important role in the formation of the properties and the therm al stability of the experimental structures on the interphase boundary of t hese structures. (C) 1999 American Institute of Physics.