(001)-oriented and oxygen-deficient ZnO thin films are prepared by pulsed l
aser deposition on quartz fused, (100) silicon and (001) sapphire substrate
s, respectively. The structural, electrical and optical properties of the a
s-grown films are characterized with various techniques. The Raman measurem
ents reveal additional EI(LO) mode peak at 579cm(-1), indicating oxygen def
iciency in the films. (001)-LiNbO3/ZnO heterostructure is prepared on quart
z fused and (001) sapphire plates.