Low-temperature processing of Pb{(Mg1/3Nb2/3)(0.9)Ti-0.1}O-3 thin film by sol-gel casting

This paper focuses on a new class of processing for low-temperature deposit ion of thin films. In this study, ferroelectric Pb{(Mg1/3Nb2/3)(0.9)Ti-0.1} O-3 thin films were successfully prepared at low-temperature of 800 degrees C. We proposed a new processing as a "sol-gel-casting" which includes disp ersion of fine crystalline particles in the sol-gel derived precursor solut ions followed by the casting and annealing at relatively low-temperatures. As a result, ferroelectric Pb{(Mg1/3Nb2/3)(0.9)Ti0.1}O-3 thin films with a few mu m thickness were successfully deposited on a silicon wafer with a pl atinum electrode (Pt/Ti/SiO2/Si). The dielectric properties of the resultan t thin films depended on the processing conditions which controlled the mic rostructure of the films.