J. Akedo et al., Electrical properties of direct deposited piezoelectric thick film formed by gas deposition method - Annealing effect of the deposited films, FERROELECTR, 231(1-4), 1999, pp. 873-880
Ultrafine particles jetting with the velocities of several hundreds m/s are
accumulated on the metal and ceramic substrate via impact adhesion. Recent
ly, the application of this phenomenon as a thick film formation method has
been investigated for micro electro mechanical systems (MEMS) and micro de
vices. The gas deposition method is one of the thick film formation method
based on impact adhesion of ultrafine particle. In this paper, the optimum
annealing condition for the deposited Pb(Zr,Ti)O-3 film with thickness over
10 mu m is reported. For the deposited films after annealing at 600 degree
s C for 1hour, the remanent polarization of 20 mu C/cm(2) and the coercive
filed of 44.7kV/cm was obtained.