Electrical properties of direct deposited piezoelectric thick film formed by gas deposition method - Annealing effect of the deposited films

Authors
Akedo, J Minami, N Fukuda, K Ichiki, M Maeda, R
Citation
J. Akedo et al., Electrical properties of direct deposited piezoelectric thick film formed by gas deposition method - Annealing effect of the deposited films, FERROELECTR, 231(1-4), 1999, pp. 873-880
Citations number
8
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
FERROELECTRICS
ISSN journal
00150193 → ACNP
Volume
231
Issue
1-4
Year of publication
1999
Pages
873 - 880
Database
ISI
SICI code
0015-0193(1999)231:1-4<873:EPODDP>2.0.ZU;2-0
Abstract
Ultrafine particles jetting with the velocities of several hundreds m/s are accumulated on the metal and ceramic substrate via impact adhesion. Recent ly, the application of this phenomenon as a thick film formation method has been investigated for micro electro mechanical systems (MEMS) and micro de vices. The gas deposition method is one of the thick film formation method based on impact adhesion of ultrafine particle. In this paper, the optimum annealing condition for the deposited Pb(Zr,Ti)O-3 film with thickness over 10 mu m is reported. For the deposited films after annealing at 600 degree s C for 1hour, the remanent polarization of 20 mu C/cm(2) and the coercive filed of 44.7kV/cm was obtained.