Optimization of transistor structure for transistor-stabilized field emitter arrays

Reliability of the metal-oxide-semiconductor field-effect transistor (MOSFE T)-stabilized field emitters at high-field operation has been assessed by c omparing two different MOSFET structures. Electrical characteristics and be havior of carriers in the device structure have been investigated by means of device simulation. One structure, which is referred to as the externally connected-MOSFET emitter, exhibits an anomalous increase in drain current, which is induced by impact ionization at the drain edge. Upon evaluating t he emission characteristics, it was clarified that the anomalous current in crease induced by the impact ionization degraded stability and controllabil ity of the emission current significantly. The other structure, which is re ferred to as the MOSFET-structured emitter, shows higher reliability with n egligible effect of impact ionization.