EPITAXIAL-GROWTH OF CUBIC SIC FILMS ON SI SUBSTRATES BY HIGH-VACUUM CHEMICAL-VAPOR-DEPOSITION USING 1,3-DISILABUTANE

Heteroepitaxial cubic SiC films were grown on (001) Si substrates at 9 00 to 980 degrees C using 1,3-disilabutane (H3SiCH2SiH2CH3) as a singl e molecular precursor under high vacuum conditions (5.0 to 8.0 x 10(-6 ) Torr). A carbonized buffer layer, grown in situ by gas source molecu lar beam epitaxy (GSMBE) of propane (C3H8) was employed to minimize th e effect of lattice mismatch between the Si substrate and the SiC over layer. The crystalline structure, chemical composition, and thickness of the deposited films were investigated by in situ reflection high-en ergy diffraction, x-ray diffraction, Rutherford back scattering, Auger electron spectroscopy and transmission electron microscopy. The resul ts show that high quality epitaxial 3C-SiC films with correct stoichio metry can be deposited on Si in this temperature range. The single pre cursor 1,3-disilabutane has been found suitable for the epitaxial grow th of cubic SiC on (001) Si substrates.