Low temperature growth of epitaxial (Ba, Sr)TiO2 thin film by sputter molecular beam epitaxy method

Authors
Horiguchi, A Watanabe, Y
Citation
A. Horiguchi et Y. Watanabe, Low temperature growth of epitaxial (Ba, Sr)TiO2 thin film by sputter molecular beam epitaxy method, JPN J A P 1, 38(9B), 1999, pp. 5314-5316
Citations number
8
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS → ACNP
Volume
38
Issue
9B
Year of publication
1999
Pages
5314 - 5316
Database
ISI
SICI code
Abstract
A novel sputtering method that can be regarded as a new version of the mole cular beam epitaxy (MBE) method is proposed. Epitaxial (Ba,Sr)TiO3 films ar e grown at a pressure below 6 x 10(-4) Torr at a large large-substrate dist ance of 24 cm. The highest temperature in all the deposition process includ ing the in-situ post annealing is 350 degrees C. Additionally, a very smoot h surface is confirmed by an atomic force microscopy.