A. Horiguchi et Y. Watanabe, Low temperature growth of epitaxial (Ba, Sr)TiO2 thin film by sputter molecular beam epitaxy method, JPN J A P 1, 38(9B), 1999, pp. 5314-5316
A novel sputtering method that can be regarded as a new version of the mole
cular beam epitaxy (MBE) method is proposed. Epitaxial (Ba,Sr)TiO3 films ar
e grown at a pressure below 6 x 10(-4) Torr at a large large-substrate dist
ance of 24 cm. The highest temperature in all the deposition process includ
ing the in-situ post annealing is 350 degrees C. Additionally, a very smoot
h surface is confirmed by an atomic force microscopy.