Bottom electrode structures of Pt/RuO2/Ru on polycrystalline silicon for low temperature (Ba,Sr)TiO3 thin film deposition

Electrode structures of Pt/RuO2/Ru on polysilicon and (Ba,Sr)TiO3(BST) thin films on Pt/RuO2/Ru/poly-Si structures were prepared by metal-organic chem ical vapor deposition (MOCVD). The barrier layers of RuO2/Ru deposited by M OCVD showed a stable interface and did not affect the surface morphology of the platinum bottom electrode even at a high annealing temperature of 800 degrees C in oxygen ambient. Contacts in the annealed state up to 800 degre es C exhibited linear current-voltage characteristics with a constant speci fic contact resistance of 5.0 x 10(-5) Omega.cm(2). The excellent leakage c urrent characteristics and dielectric properties of 50-nm-thick BST films w ere due to the stable and smooth morphologies of the bottom electrodes at B ST deposition temperature.