Annealing effect of Pb(Zr, Ti)O-3 ferroelectric capacitor in active ammonia gas cracked by catalytic chemical vapor deposition system

The effects of annealing treatments on Pb(Zr,Ti)O-3 (PZT) film capacitors i n active ammonia gas are investigated as a function of substrate temperatur e. Since active ammonia gas is generated by cracking of ammonia gas using a heated catalyzer in catalytic chemical vapor deposition (Cat-CVD) apparatu s, knowledge of the effect of active ammonia gas on ferroelectric propertie s is important for the application of Cat-CVD silicon nitride films for the passivation of ferroelectric devices such as PZT, No degradation of ferroe lectricity was detected for treatment carried out below 200 degrees C. It w as revealed that the Cat-CVD method is a promising candidate for the prepar ation of SINx passivation films on ferroelectrics.