Preparation of Pb(Zr, Ti)O-3 thin films by plasma-assisted sputtering

A novel plasma-assisted RF magnetron sputtering system with an immersed coi l antenna between a target and a substrate was applied for preparing Pb(Zr, Ti)O-3 (PZT) thin films. The antenna enabled the generation of inductively coupled plasma (ICP) independently of the target RF source. The plasma assi sted by the antenna resulted in the changes of ion fluxes and these energy distributions irradiating to the substrate. The crystalline phase of the de posited PZT thin films was occupied by the perovskite phase depending on th e antenna power. In addition, a high deposition rate, modified uniformity o f film thickness, and a dense film structure with large columnar grains wer e obtained as a result of effects of the assisted plasma. The application o f the plasma-assisted sputtering method may enable the preparation of PZT t hin films that have excellent properties.