INP CRYSTALS-ION IMPLANTATION AND LASER ANNEALING - RHEED, XPS AND COMPUTER-SIMULATION STUDIES

Reflection high-energy electron diffraction (RHEED) and X-ray photoele ctron spectroscopy (XPS) were used to demonstrate the effects of Zn+-i on implantation and subsequent low-power pulsed laser annealing (LPPLA ) on the crystallinity and the P/In ratio near the surface of InP. The influence of ion-beam effects during depth profiling by a 1 to 5 keV Ar beam on the composition of surface layers is discussed in terms of XPS data compared to computer simulation results using a dynamic model based on TRIM. Relative enrichment in P of the topmost surface layer of virgin samples along with the P deficiency below the surface is con firmed by both XPS and computer simulation data, the effect being more pronounced for higher energies of the depth-profiling Ar+ beam. Sever e C and O contamination is found on the ion-implanted InP surface expo sed to air. The P/In ratios at and below the surface (to about 10 nm d epth) differ from that for the virgin sample. Both RHEED and XPS demon strate the efficiency of laser pulses at a power density of 6 MW/cm(2) in recovering the structure and stoichiometry of ion-implanted crysta ls of InP.