Effect of deposition temperature and composition on the microstructure andelectrical property of SrBi2Ta2O9 thin films prepared by metalorganic chemical vapor deposition

SrBi2Ta2O9 (SBT) thin films were prepared by conventional thermal metalorga nic chemical vapor deposition (MOCVD) and subsequent heat treatment. The SB T film deposited at 500 degrees C had a smoother surface and better step co verage than that deposited at 750 degrees C. The degree of step coverage de posited at 500 degrees C was 0.82. An almost single phase of SBT was obtain ed for the film with a Bi/Ta mole ratio of 1.0 by heat treatment at 750 deg rees C for 30 min in O-2 atmosphere after MOCVD deposition at 500 degrees C , 2P(r) and E-C at an applied electric field of 620 kV/cm were 12.2 mu C/cm (2) and 87 kV/cm, respectively, when the film was deposited at 500 degrees C followed by heat treatment at 800 degrees C for 30 min in O-2 atmosphere, and its Bi/Ta ratio was 1.2.