Lowering the crystallization temperature of YMnO3 thin films by the sol-gel method using an yttrium alkoxide

We have succeeded in lowering the crystallization temperature of sol-gel de rived YMnO3 thin films to 500 degrees C by using yttrium alkoxide as a star ting material. The X-ray diffraction measurements indicated that the films heat treated at temperatures above 500 degrees C had a single phase of hexa gonal YMnO3. The crystallization temperature of the YMnO3 thin film prepare d from yttrium alkoxide was lower by at least 300 degrees C than that of fi lm prepared from yttrium acetate. The film prepared from the alkoxide and h eal treated at 700 degrees C for 3 min had a high crystallinity with c-axis preferred orientation, and ferroelectricity was observed in the film. The formation temperature of the ferroelectric YMnO3 thin film prepared from yt trium alkoxide was lower by at least 100 degrees C than that of film prepar ed from yttrium acetate.