H. Kitahata et al., Lowering the crystallization temperature of YMnO3 thin films by the sol-gel method using an yttrium alkoxide, JPN J A P 1, 38(9B), 1999, pp. 5448-5451
We have succeeded in lowering the crystallization temperature of sol-gel de
rived YMnO3 thin films to 500 degrees C by using yttrium alkoxide as a star
ting material. The X-ray diffraction measurements indicated that the films
heat treated at temperatures above 500 degrees C had a single phase of hexa
gonal YMnO3. The crystallization temperature of the YMnO3 thin film prepare
d from yttrium alkoxide was lower by at least 300 degrees C than that of fi
lm prepared from yttrium acetate. The film prepared from the alkoxide and h
eal treated at 700 degrees C for 3 min had a high crystallinity with c-axis
preferred orientation, and ferroelectricity was observed in the film. The
formation temperature of the ferroelectric YMnO3 thin film prepared from yt
trium alkoxide was lower by at least 100 degrees C than that of film prepar
ed from yttrium acetate.