Growth of 3-inch langasite single crystal and its application to substratefor surface acoustic wave filters

Citation
S. Uda et al., Growth of 3-inch langasite single crystal and its application to substratefor surface acoustic wave filters, JPN J A P 1, 38(9B), 1999, pp. 5516-5519
Citations number
11
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Volume
38
Issue
9B
Year of publication
1999
Pages
5516 - 5519
Database
ISI
SICI code
Abstract
Macro defect-free langasite (La3Ga5SiO14) of 3" diameter was grown by the C zochralski technique. Thermal treatment of the melt and a uniform interface shape are important for langasite growth with a clear habit of faceting. T he homogeneity in composition was two-dimensionally investigated by X-ray d iffraction analysis and SAW (surface acoustic wave) velocity distribution o n the wafer fabricated from the crystal. The deviation was sufficiently sma ll for the use of langasite as a suitable substrate in SAW device applicati ons. SAW properties were calculated based on the available material constan ts.