S. Uda et al., Growth of 3-inch langasite single crystal and its application to substratefor surface acoustic wave filters, JPN J A P 1, 38(9B), 1999, pp. 5516-5519
Macro defect-free langasite (La3Ga5SiO14) of 3" diameter was grown by the C
zochralski technique. Thermal treatment of the melt and a uniform interface
shape are important for langasite growth with a clear habit of faceting. T
he homogeneity in composition was two-dimensionally investigated by X-ray d
iffraction analysis and SAW (surface acoustic wave) velocity distribution o
n the wafer fabricated from the crystal. The deviation was sufficiently sma
ll for the use of langasite as a suitable substrate in SAW device applicati
ons. SAW properties were calculated based on the available material constan
ts.