SIH4 AND GEH4 CHEMICAL-VAPOR-DEPOSITION OF GESI GE HETEROSTRUCTURES/

Authors
GU SL ZHU XM JIANG N SHI Y ZHANG R ZHENG YD
Citation
Sl. Gu et al., SIH4 AND GEH4 CHEMICAL-VAPOR-DEPOSITION OF GESI GE HETEROSTRUCTURES/, Applied surface science, 115(1), 1997, pp. 28-30
Citations number
7
Categorie Soggetti
Physics, Condensed Matter","Chemistry Physical","Materials Science, Coatings & Films
Journal title
Applied surface science → ACNP
ISSN journal
01694332
Volume
115
Issue
1
Year of publication
1997
Pages
28 - 30
Database
ISI
SICI code
0169-4332(1997)115:1<28:SAGCOG>2.0.ZU;2-J
Abstract
The deposition of GeSi alloys on Ge substrate by Rapid Thermal Process , Very Low Pressure CVD method has been studied. The growth rate of th e GeSi alloy increases as the Si atoms are incorporated into the GeSi alloy at a proper temperature. The high substrate temperature will cau se the Si fraction and the GeSi growth rate to increase.