Properties of Cu(In,Ga)Se-2 thin films prepared by chemical spray pyrolysis

Citation
S. Shirakata et al., Properties of Cu(In,Ga)Se-2 thin films prepared by chemical spray pyrolysis, JPN J A P 1, 38(9A), 1999, pp. 4997-5002
Citations number
19
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Volume
38
Issue
9A
Year of publication
1999
Pages
4997 - 5002
Database
ISI
SICI code
Abstract
Thin polycrystalline films of Cu(In,Ga)Se-2 alloy with the single-phase cha lcopyrite structure were successfully grown by the chemical spray pyrolysis (CSP) method on a glass substrate at 360 and 400 degrees C. Alloy composit ion in the film was well controlled by that in the spray solution. The film s were characterized by X-ray diffraction, optical absorption, Raman spectr oscopy, van der Pauw measurement and scanning electron microscopy. It was f ound that lattice constants, the optical band-gap energy and the A(1) mode phonon frequency changed continuously with the alloy composition a. A grain size of about 1 mu m was obtained for Cu-rich films.