Xq. Liu et al., Wavelength tuning of GaAs/AlGaAs quantum-well infrared photodetectors by thermal interdiffusion, JPN J A P 1, 38(9A), 1999, pp. 5044-5045
Thermal interdiffusion is used to shift peak response wavelength of quantum
well infrared photodetectors. A maximum 0.7 mu m red-shift for 900 degrees
C annealed devices compared with as-grown one has been obtained. Error fun
ction potential profile is used to calculate the intermixing process. nle l
arge red-shift is attributed to Si-dopant enhanced intermixing. Dark curren
t is decreased about 5 times for 900 degrees C annealed sample than as-grow
n one,which is attributed to Si-dopant out-diffusion. The experimentally ob
served reduction in the responsivity is attributed to our-diffusion of Si-d
opant and degradation of interfaces.