Significant effects of As ion implantation on Si-selective epitaxy by ultrahigh vacuum chemical vapor deposition

The relation between As ion implantation and Si-selective epitaxy is invest igated, taking account of the application of ultrahigh vacuum chemical vapo r deposition to LSI devices. For a non-implanted wafer, undesirable island- like growth occurred because oxygen was introduced into the Si substrate by previous etching processes. The implantation of a sufficient dosage of As ions restored layer-by-layer growth with excellent surface morphology, whic h is explained in terms of the removal of the disturbed layer by the additi onal sputtering effect of ion implantation.