Conformal step coverage and trench filling of liquid phase oxide deposition

Authors
Lee, MK Yang, CN Lin, CH
Citation
Mk. Lee et al., Conformal step coverage and trench filling of liquid phase oxide deposition, JPN J A P 1, 38(9A), 1999, pp. 5048-5049
Citations number
10
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS → ACNP
Volume
38
Issue
9A
Year of publication
1999
Pages
5048 - 5049
Database
ISI
SICI code
Abstract
The low-temperature and selective growth in liquid phase deposition of sili con dioxide (LPD-SiO2) makes it suitable for many interesting applications in integrated circuit (IC) fabrications, such as trench isolation, and comp letely planarized multilevel interconnections. In this paper, the potential of LPD-SiO2 conformal step coverage and trench filling is demonstrated.