Preparation and crystallization of tin-doped and undoped amorphous indium oxide films deposited by sputtering

Authors
Song, PK Akao, H Kamei, M Shigesato, Y Yasui, I
Citation
Pk. Song et al., Preparation and crystallization of tin-doped and undoped amorphous indium oxide films deposited by sputtering, JPN J A P 1, 38(9A), 1999, pp. 5224-5226
Citations number
9
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS → ACNP
Volume
38
Issue
9A
Year of publication
1999
Pages
5224 - 5226
Database
ISI
SICI code
Abstract
Tin-doped and undoped amorphus indium oxide films were prepared by de magne tron sputtering without substrate heating at relatively high total gas pres sures and relatively large target-substrate distance. The structural and el ectrical properties of these films were investigated by X-ray diffraction a nd Hall-effect measurements. The amorphous tin-doped indium oxide (a-ITO) f ilms were crystallized at a temperature about 30 degrees C higher than that for amorphous indium oxide (a-IO) films.