CO2 laser annealing on fluorinated silicon oxide films

CO2 laser annealing of fluorinated silicon oxide films grown by liquid-phas e deposition (LPD) is proposed to improve the properties of the as-deposite d films. It is found that the fluorinated silicon oxide films after laser a nnealing become much denser and that the effective surface charge density ( Q(ss)/q) is reduced significantly. However, the properties of the fluorinat ed silicon oxide films after laser annealing depended on the power density of the laser beam. It is also found that the effect of laser annealing is m ost prominent when the power density of the laser beam is controlled at 12 KW/cm(2). Based on the experimental results, it may be expected that the st ructure of a fluorinated LPD-SiO2 film following CO2 laser annealing is sim ilar to those of the thermally grown layers. Thus, CO2 laser annealing is t he best candidate for improving the properties of LPD oxide films.