Controllable nanopit formation on Si(001) with a scanning tunneling microscope

The possibility of controlling the field-induced nanoscale-pit formation on the Si(001) surface by using an ultrahigh-vacuum scanning tunneling micros cope has been demonstrated. Quadrilateral nanoscale-pits can be formed at h igh temperatures of 500-600 degrees C by strong electric fields between the sample and the scanning tip through layer by layer removal of Si atoms fro m the silicon surface. The depth of nanopits increases linearly with the du ration of applying electric fields. An array of uniformly shaped nanopits c an be fabricated, indicating the controllability of this nanofabrication te chnique.