Intrinsic polarised emission from InAs/GaAs(311)A quantum dots

Authors
Sanguinetti, S Castiglioni, S Grilli, E Guzzi, M Panzarini, G Andreani, LC Henini, M
Citation
S. Sanguinetti et al., Intrinsic polarised emission from InAs/GaAs(311)A quantum dots, JPN J A P 1, 38(8), 1999, pp. 4676-4679
Citations number
20
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS → ACNP
Volume
38
Issue
8
Year of publication
1999
Pages
4676 - 4679
Database
ISI
SICI code
Abstract
Dependence on the exact growth condition of the InAs/GaAs quantum lot emiss ion polarisation has been tested for (100) and (311)A substrates. Polarised emission, reproducible in intensity and direction and independent of the c overage, has been achieved by self-assembling InAs quantum dots on (311)A G aAs substrates only. The quantum dots emission is stably polarised along th e [(2) over tilde 33] crystallographic direction with a polarisation ratio of about 12%.