Correlation between charge pumping method and direct-current current voltage method in p-type metal-oxide-semiconductor field-effect transistors

In this study, the correlation between the charge pumping (CP) method and t he direct-current current voltage (DCIV) method in p-type metal-oxide-semic onductor field-effect transistors (pMOSFETs) is investigated: We found that the two techniques probe essentially the same interface traps in the chann el (C) region as well as in the drain (D) region. A good linear relationshi p is observed between the DCN signal and the CF signal. One obvious advanta ge of the DCIV method is that it can clearly and directly distinguish the i nterface traps in the C region and in the D region, respectively. This is p ossible in the CP method only after complicated manipulation of raw experim ental data. The shift of V-ep, shows the net effect of compensating oxide c harge and interface trapped charge, while the shift of V-gb,V-max mainly sh ows the effect of the oxide charge.