A dopant-related defect in Te-doped AlInP

Authors
Wu, YR Sung, WJ Wen, TC Lee, SC Lee, WI
Citation
Yr. Wu et al., A dopant-related defect in Te-doped AlInP, JPN J A P 1, 38(8), 1999, pp. 4720-4721
Citations number
12
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS → ACNP
Volume
38
Issue
8
Year of publication
1999
Pages
4720 - 4721
Database
ISI
SICI code
Abstract
A deep level in Te-doped Al0.5In0.5P, grown by metal organic chemical vapor deposition, has been studied by deep level transient spectroscopy. The the rmal activation energy was 0.24 eV, and the trap concentration was related to Te-dopant concentration. The deep level concentration strongly increased with elevating Te-dopant concentration. Meanwhile, the trap distribution p rofile also presented the same distribution behavior as the Te concentratio n profile. Therefore, the deep level in Te-doped AlInP is verified to be a dopant-related defect.