Exchange interaction from current and voltage probes in galvanomagnetic effect in polycrystal Co thin film

The galvanomagnetic effect in a polycrystal Co thin film was investigated b y measuring magnetoresistance and Hall resistance. The observed magnetoresi stance can be understood in term of the anisotropic magnetoresistance effec t using the Stoner-Wohlfarth model. The observed Hall resistance cannot be explained syfficiently by the planar Hall effect using the Stoner-Wohlfarth model. In order to explain the observed Hall resistance, we took the excha nge interaction from the current and voltage probes into consideration and numerically calculated the magnetoresistance and the Hall resistance. The c alculated results obtained using this model are in reasonable agreement wit h the experimental results.