Comment on "lasing emission from an In0.1Ga0.9N vertical cavity surface emitting laser"

Someya ef al. recently reported [Jpn. J. Appl. Phys. 37 (1998) L1424] optic ally pumped laser operation from an InGaN-based Vertical cavity surface emi tting laser, which they characterize as the "the first unambiguous observat ion of laser emission by a III-V nitride VCSEL." They claim chat our previo us report of lasing ina GaN-based vertical cavity laser is attributable to phenomena other than vertical lasing. We argue against the plausibility the authors' unsubstantiated alternative explanation for our results, which fo rms the basis for their claim.