Someya ef al. recently reported [Jpn. J. Appl. Phys. 37 (1998) L1424] optic
ally pumped laser operation from an InGaN-based Vertical cavity surface emi
tting laser, which they characterize as the "the first unambiguous observat
ion of laser emission by a III-V nitride VCSEL." They claim chat our previo
us report of lasing ina GaN-based vertical cavity laser is attributable to
phenomena other than vertical lasing. We argue against the plausibility the
authors' unsubstantiated alternative explanation for our results, which fo
rms the basis for their claim.