Thermoelectric properties of and dopant distribution in SiC thin films

We fabricated thin films of p-type SiC by the evaporation technique with me tal dopants such as silver, nickel and copper, which acted as accepters. Th e thermoelectric properties of SiC thin films were measured. These p-type d opants could reduce the resistance of SiC films and improve their performan ce as thermoelectric materials. For samples doped with 5 wt% Ag, the resist ivity is very low compared with those of other samples. The thermoelectric power of the Ag-doped sample shows a temperature dependence in contrast to those of ether samples.