Measurement of contact potential of GaAs pn junctions by Kelvin probe force microscopy

Authors
Mizutani, T Usunami, T Kishimoto, S Maezawa, K
Citation
T. Mizutani et al., Measurement of contact potential of GaAs pn junctions by Kelvin probe force microscopy, JPN J A P 1, 38(8), 1999, pp. 4893-4894
Citations number
11
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS → ACNP
Volume
38
Issue
8
Year of publication
1999
Pages
4893 - 4894
Database
ISI
SICI code
Abstract
The contact potential of GaAs pn junctions was measured by Kelvin probe for ce microscopy (KFM). The contact potential profile of the pn junctions was not clear in the case of no illumination. When the sample was illuminated w ith a microscope light, the potential profile reflecting pn junctions becam e clear. The observed surface potential was explained by taking the surface band bending due to surface states into account.