Measurement of parameters for simulation of 193 nm lithography using Fourier transform infrared baking system

By incorporating baking equipment into a Fourier transform infrared (FT-IR) spectrometer, a deprotection reaction parameter measurement system that ca n be used with chemically amplified resists has been developed. This system allows us to study new models for chemically amplified (CA) resists by inc luding into a conventional deprotection reaction model an initial delay eff ect and a quencher effect. This model is also used to measure deprotection reaction parameters. The parameters thus obtained are inputted into a litho graphy simulator PROLITH/2 to perform profile simulations. The results are compared with those of scanning electron microscope (SEM) observations. Alt hough the simulation results and SEM observations are nor in complete agree ment, the general trends observed are in adequate agreement. These results confirm the applicability of the proposed model to CA resists for ArF excim er laser lithography and verify the usefulness of the measurement system.