Picosecond pulsed X-ray diffraction from a pulsed laser heated Si(111)

Transient lattice expansion of a Si(111) crystal induced by pulsed laser he ating is studied by the picosecond pulsed X-ray diffraction. The X-lays use d are laser induced X-rays with a pulse duration of 6 ps. The lattice expan sion at 3 ns after laser heating is estimated to be about 1 x 10(-3) Angstr om from the observed shift of Bragg angles, which is in good agreement with the numerical calculations of the temperature distribution and the heat tr ansport analysis.