Linearity study on enhance/depletion dual-gate high electron mobility transitors using gain mapping method

Power gain linearity was studied using gain mapping method for enhance/depl etion (E/D) dual-gate high electron mobility transistors (HEMTs). This meth od contains next steps. S-parameter and drain current were measured for all drain and gate voltage where interested. Maximum stable gain (MSG), maximu m available gain (MAG) and H21 parameters were then calculated for frequenc y which is interested. These parameters were plotted on drain-current and d rain voltage plane. By using this method into dual-gate HEMTs, it was found that threshold voltage of the second gates are essential for gain linearit y and have its optimum value.