Direct bonding of gallium arsenide on silicon

Direct bonding of gallium arsenide on silicon is studied. The technology is expected to enable the easy integration of gallium arsenide optoelectronic devices with silicon very-large-scale integrated circuits. The interface q uality of n-GaAs/p-Si can be improved with a thermal annealing process. It is examined by the current-voltage characteristics of the n-GaAs/p-Si diode . The bonding strength was found to be sufficiently high and could "high en ough to" withstand the subsequent grinding and polishing procedures of the bonded wafers.