Effects of phosphorus dopant on the thermal stability of thin Pd2Si and PtSi silicide films on (100) Si substrates

The effects of phosphorus dopant on the thermal stability of thin Pd and Pt silicide films on (100) Si substrates have been studied. For the samples f ormed by implanting phosphorus dopant into thin Pd films followed by anneal ing, both the thermal stability and the silicide conductivity of thin Pd2Si films are significantly enhanced relative to the control samples without d opant incorporation. Large improvements in the thermal stability and the si licide conductivity are dependent on the formation of a textured Pd2Si stru cture. In addition, the Pt silicides formed by implanting phosphorus dopant into thin Pt films followed by annealing also show considerably improved t hermal stability.