Enhanced electron mobility in AlGaN/InGaN/AlGaN double-heterostructures bypiezoelectric effect

A striking effect of piezoelectric electron confinement on transport proper ties has been observed for the first time in nitride double-heterostructure s. The two-dimensional electron gas mobility has shown to be drastically en hanced in the AlGaN/GaN/AlGaN double-heterostructure, compared with that in the conventional AlGaN/GaN single-heterostructure. The observed mobility e nhancement results from the piezoelectrically enhanced electron confinement in the double-heterostructure. The electron transport properties in the Al GaN/InGaN/AlGaN double-heterostructure have also been examined for the firs t time. The increased capacity for the two-dimensional electron gas density has been observed in addition to the enhanced electron mobility. The AlGaN /(In)GaN/AlGaN double-heterostructures are promising for field effect trans istor applications because of their superior electron transport properties.