Optically patternable polymer light-emitting devices with an indium-tin-oxi
de/poly(2-methoxy-5-dodecyloxy-p-phenylene vinylene)/semitransparent-Al str
ucture are fabricated and characterized. When the optical transmittance of
the Al electrode is about 30% at a 500 nm wavelength, the emission from the
device is rapidly reduced by photoirradiation in air, and the emission is
completely suppressed after irradiation for 5 min. Considerable bleaching o
f the optical absorption of the polymer film of the devices due to photoirr
adiation is also observed. These effects originate from photooxidation of t
he polymer by the atmospheric oxygen passing through the semitransparent-Al
electrode. It is also shown that these effects are considerably moderated
by using a thicker Al electrode, indicating the importance of the Al electr
ode thickness on the patternability of the emission.