Hole capture barrier of self-organized InAs quantum dots

Deep level transient spectroscopy (DLTS) technique was successfully applied to characterize the electric properties of p type self-organized InAs quan tum dots. The ground state energy and capture barrier energy of hole of qua ntum dots were measured for the first time. The energy of ground state of 2 .5ML InAs quantum dots with respect to the valence band of bulk GaAs was ob tained being about 0.09eV, and there was a barrier associated to the change of charge state of quantum dots. The capture barrier energy of such dots f or hole was about 0.26eV. The work is very meaningful for further understan ding the intrinsic properties of quantum dots.