Synthesis of NiS2 thin films - Electrical and optical properties

Citation
Ij. Ferrer et C. Sanchez, Synthesis of NiS2 thin films - Electrical and optical properties, J MATER PR, 93, 1999, pp. 239-242
Citations number
20
Categorie Soggetti
Material Science & Engineering
Journal title
JOURNAL OF MATERIALS PROCESSING TECHNOLOGY
ISSN journal
09240136 → ACNP
Volume
93
Year of publication
1999
Pages
239 - 242
Database
ISI
SICI code
0924-0136(19990830)93:<239:SONTF->2.0.ZU;2-U
Abstract
NiS2 thin films for photovoltaic applications have been deposited from the elements S and Ni. Their structural, optical and electrical properties have been investigated and compared with those of single crystals. The depositi on technique used here is suitable for growing films on large area substrat es and it can be used easily and fruitfully to grow other chalcogenide comp ounds. (C) 1999 Elsevier Science S.A. All rights reserved.