Transport and electronic properties of DyRu2Si2 and ErRU2Si2 compounds

Results of the transport and electronic structure of DyRu2Si2 and ErRu2Si2 compounds are presented. These compounds crystallize in a tetragonal ThCr2S i2-type of structure. At high temperatures the resistivity varies linearly with temperature, whereas at low temperatures anomalies connected with the magnetic phase transitions are observed. The electronic structure and corre sponding x-ray photoemission spectra (XPS) are presented. The band structur e is calculated by the spin-polarized tight-binding linear muffin-tin orbit al (TB LMTO) method. The XPS valence bands are compared with the calculated electronic density of states. In both compounds 4d states of Ru atoms form a band near to the Fermi level.