Acoustic emission activity vs. electrical field has been studied in thin Ge
Se films applying electrical field up to 10(9) V/m. On the base of the obta
ined results the mechanism of the breakdowns has been determined. Structura
l changes in the thin films have been investigated. Transformation of struc
ture from amorphous to polycrystalline state has been observed. (C) 1999 El
sevier Science B.V. All rights reserved.