Investigation of structural chances in GeSe thin films by acoustic emission

Citation
P. Petkov et al., Investigation of structural chances in GeSe thin films by acoustic emission, MATER LETT, 41(1), 1999, pp. 27-31
Citations number
8
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
MATERIALS LETTERS
ISSN journal
0167577X → ACNP
Volume
41
Issue
1
Year of publication
1999
Pages
27 - 31
Database
ISI
SICI code
0167-577X(199910)41:1<27:IOSCIG>2.0.ZU;2-I
Abstract
Acoustic emission activity vs. electrical field has been studied in thin Ge Se films applying electrical field up to 10(9) V/m. On the base of the obta ined results the mechanism of the breakdowns has been determined. Structura l changes in the thin films have been investigated. Transformation of struc ture from amorphous to polycrystalline state has been observed. (C) 1999 El sevier Science B.V. All rights reserved.