Investigation of temperature acceleration of thin oxide time-to-breakdown

Citation
B. Kaczer et al., Investigation of temperature acceleration of thin oxide time-to-breakdown, MICROEL ENG, 48(1-4), 1999, pp. 47-50
Citations number
10
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
MICROELECTRONIC ENGINEERING
ISSN journal
01679317 → ACNP
Volume
48
Issue
1-4
Year of publication
1999
Pages
47 - 50
Database
ISI
SICI code
0167-9317(199909)48:1-4<47:IOTAOT>2.0.ZU;2-Q
Abstract
We study the effect of elevated temperature on the thin oxide breakdown. We find that the Arrhenius law does not describe the process well-in contrast to that we observe the log of the time-to-breakdown to scale linearly with temperature for a wide range of oxide thicknesses. We further observe that both the hole fluence and the neutral electron trap density at breakdown d ecrease at increased temperatures and do not reach constant critical values . We also show how elevated temperature affects:the reliability of oxide fi lms and predict insufficient reliability for oxides below 2.5 - 2.8 nm.