We study the effect of elevated temperature on the thin oxide breakdown. We
find that the Arrhenius law does not describe the process well-in contrast
to that we observe the log of the time-to-breakdown to scale linearly with
temperature for a wide range of oxide thicknesses. We further observe that
both the hole fluence and the neutral electron trap density at breakdown d
ecrease at increased temperatures and do not reach constant critical values
. We also show how elevated temperature affects:the reliability of oxide fi
lms and predict insufficient reliability for oxides below 2.5 - 2.8 nm.