Reliability of ultrathin oxide and nitride films in the 1nm to 2nm range

Authors
Yuwono, B Schloesser, T Gschwandtner, A Innertsberger, G Grassl, A Olbrich, A Krautschneider, W
Citation
B. Yuwono et al., Reliability of ultrathin oxide and nitride films in the 1nm to 2nm range, MICROEL ENG, 48(1-4), 1999, pp. 51-54
Citations number
3
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
MICROELECTRONIC ENGINEERING
ISSN journal
01679317 → ACNP
Volume
48
Issue
1-4
Year of publication
1999
Pages
51 - 54
Database
ISI
SICI code
0167-9317(199909)48:1-4<51:ROUOAN>2.0.ZU;2-9
Abstract
The scaled-down MOSFETs of the 16 Gbit generation and beyond will require a gate dielectric thickness less than 2 nm. Reliability of ultra thin dielec trics were investigated in DC and AC stress at room and elevated temperatur es.