Ultra thin high-quality stack nitride/oxide gate dielectrics prepared by in-situ rapid thermal N2O oxidation of NH3-nitrided Si

Authors
Song, SC Luan, HF Lee, CH Mao, AY Lee, SJ Gelpey, J Marcus, S Kwong, DL
Citation
Sc. Song et al., Ultra thin high-quality stack nitride/oxide gate dielectrics prepared by in-situ rapid thermal N2O oxidation of NH3-nitrided Si, MICROEL ENG, 48(1-4), 1999, pp. 55-58
Citations number
8
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
MICROELECTRONIC ENGINEERING
ISSN journal
01679317 → ACNP
Volume
48
Issue
1-4
Year of publication
1999
Pages
55 - 58
Database
ISI
SICI code
0167-9317(199909)48:1-4<55:UTHSNG>2.0.ZU;2-X
Abstract
In this paper, we report ultra thin high quality nitride/oxide gate dielect rics prepared by rapid thermal NH3 nitridation of Si followed by in-situ N2 O oxidation (NH3+N2O process). These films show excellent interface propert ies, significant lower leakage current (similar to 10(2)X), enhanced reliab ility, and superior boron diffusion barrier properties compared with Sig of identical equivalent oxide thickness (Tox,eq).