Ultrathin (<3nm) gate dielectrics made by plasma nitridation of SiO2 films
have been studied by a combination of physical (ellipsometry, Nuclear React
ion Analysis, Medium Energy Ion Scattering, and Atomic Force Microscopy) an
d electrical (C-V, I-V, and constant voltage stress) methods. The main obse
rvation we report here is a reduction of leakage current in the nitrided ox
ides at the expense of reduced (peak) mobility, flatband voltage shift (for
high concentration of incorporated nitrogen) and lower breakdown strength.